1 publication order number : NDBA180N10B/d www.onsemi.com ? semiconductor component s industries, llc, 2015 march 2015 - rev. 3 ordering information see detailed ordering and shipping info rmation on page 6 of this data sheet. NDBA180N10B features ? ultra low on-resistance ? low gate charge ? high speed switching ? 100% avalanche tested ? pb-free, halogen free and rohs compliance specifications absolute maximum ratings at ta = 25 c parameter symbol value unit drain to source voltage v dss 100 v gate to source voltage v gss 20 v drain current (dc) i d 180 a drain current (dc) limited by package i dl 100 a drain current (pulse) pw 10 s, duty cycle 1% i dp 600 a power dissipation tc=25 c p d 200 w junction temperature tj 175 c storage temperature tstg ? 55 to +175 c source current (body diode) i s 100 a avalanche energy (single pulse) * 1 e as 451 mj lead temperature for soldering purposes, 3mm from case for 10 seconds t l 260 c thermal resistance ratings parameter symbol value unit junction to case steady state r jc 0.75 c/w junction to ambient * 2 r ja 62.5 note : * 1 v dd =48v, l=100 h, i av =70a (fig.1) * 2 surface mounted on fr4 board using recommended footprint power mosfet 100v, 2.8m ? , 180a, n-channel electrical connection n-channel stresses exceeding those listed in the maximum ratings table may damage the device. if any of these limits are exceeded, device functionality should n ot be assumed, damage may occur and reliability may be affected. marking packing type:tl 1 3 2 , 4 1:gate 2:drain 3:source 4:drain v dss r ds (on) max i d max 100v 2.8m ? @ 15v 180a 3.3m ? @ 10v stresses exceeding those listed in the maximum ratings table may damage the device. if any of these limits are exceeded, device functionality should n ot be assumed, damage may occur and reliability may be affected.
NDBA180N10B www.onsemi.com 2 electrical characteristics at ta = 25 c parameter symbol conditions value unit min typ max drain to source breakdown voltage v( br ) dss i d =10ma, v gs =0v 100 v zero-gate voltage drain current i dss v ds =100v, v gs =0v 10 a gate to source leakage current i gss v gs = 20v, v ds =0v 200 na gate threshold voltage v gs (th) v ds =10v, i d =1ma 2 4 v forward transconductance g fs v ds =10v, i d =50a 150 s static drain to source on-state resistance r ds (on)1 i d =50a, v gs =15v 2.3 2.8 m r ds (on)2 i d =50a, v gs =10v 2.5 3.3 m input capacitance ciss v ds =50v, f=1mhz 6,950 pf output capacitance coss 3,000 pf reverse transfer capacitance crss 15 pf turn-on delay time t d (on) see fig.2 95 ns rise time t r 320 ns turn-off delay time t d (off) 185 ns fall time t f 130 ns total gate charge qg v ds =48v, v gs =10v, i d =100a 95 nc gate to source charge qgs 31 nc gate to drain ?miller? charge qgd 26 nc forward diode voltage v sd i s =100a, v gs =0v 0.9 1.5 v reverse recovery time t rr see fig.3 150 ns reverse recovery charge q rr i s =100a, v gs =0v, v dd =50v, di/dt=100a/ s 580 nc fig.1 unclamped inductive switching test circuit fig.2 switching time test circuit fig.3 reverse recovery time test circuit product parametric performance is indicated in the electrical characteristics for the listed test conditions, unless otherwise noted. product per formance may not be indicated by the electrical characteristics if operated under different conditions.
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NDBA180N10B www.onsemi.com 5 package dimensions NDBA180N10Bt4h d 2 pak-3 (to-263, 3-lead) case 418aj issue b unit : mm
NDBA180N10B www.onsemi.com 6 on semiconductor and the on logo are registered trademarks of semiconductor components industries, llc (scillc) or its subsidiaries in the united st ates and/or other countries. scillc owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. a lis ting of scillc?s product/patent coverage may be accessed at www.onsemi.com/site/pdf/patent-marking.pdf . scillc reserves the right to make changes with out further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any parti cular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specific ations can and do vary in different applications and actual performance may vary over time. all operating parameters, including ?typicals? must be validated fo r each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc pro ducts are not designed, intended, or authorized for use as com ponents in systems int ended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a situation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees ar ising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that sci llc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject t oall applicable copyright laws and is not for resale in any manner. ordering information device package shipping note NDBA180N10Bt4h d 2 pak-3 (to-263, 3-lead) 800 pcs. / tape & reel pb-free and halogen free ? for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specifications brochure, brd8011/d. http://www .onsemi.com/pub_link/co llateral/brd8011-d.pdf note on usage : since the NDBA180N10B is a mosfet product, please avoid using this de vice in the vicinity of highly charged objects.
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